型号 SP8M6FU6TB
厂商 Rohm Semiconductor
描述 MOSFET N/P-CH 30V 5A/3.5A 8SOIC
SP8M6FU6TB PDF
代理商 SP8M6FU6TB
标准包装 2,500
FET 型 N 和 P 沟道
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 5A,3.5A
开态Rds(最大)@ Id, Vgs @ 25° C 51 毫欧 @ 5A,10V
Id 时的 Vgs(th)(最大) 2.5V @ 1mA
闸电荷(Qg) @ Vgs 3.9nC @ 5V
输入电容 (Ciss) @ Vds 230pF @ 10V
功率 - 最大 2W
安装类型 表面贴装
封装/外壳 8-SOIC(0.154",3.90mm 宽)
供应商设备封装 8-SOICN
包装 带卷 (TR)
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